IRF520N HexFet Power Mosfet
SKU : IRF520N
20.00 ฿
Out of stock
Type Designator: IRF520N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 48 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9.7 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 16.7 nC
Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm
Part No : ELE-CH061062170
