IRF530N N-Channel Trenchmos Transistor

SKU : IRF530N

Type Designator: IRF530N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 79 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 17 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 24.7 nC

Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm

Part No : ELE-CH061051728