IRFD9120 Power MOSFET

SKU : IRFD9120

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field

effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operat

DESCRIPTION: The IRFD9120 is an advanced power MOSFET designed and tested to withstand a specified level of energy in the breakdown avalanche mode of operation. These are p-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. It is supplied in the 4-Pin dual-in-line plastic package.

FEATURES:

  * Single pulse avalanche energy rated

  * SOA is power-dissipation limited

  * Nanosecond switching speeds

  * Linear transfer characteristics

  * High input impedance

  * Maximum Power Dissipation: 1W

  * Package: 4-Pin DIP

  * These are in good condition.ed directly from integrated circuits.

Part No : ELE-CH061052701