MJ802 High-Power NPN Silicon Transistor

SKU : MJ802

Price

132.00 ฿

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Total 132.00 ฿

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Type Designator: MJ802G


Material of Transistor: Si


Polarity: NPN


Maximum Collector Power Dissipation (Pc): 200 W


Maximum Collector-Base Voltage |Vcb|: 100 V


Maximum Collector-Emitter Voltage |Vce|: 90 V


Maximum Emitter-Base Voltage |Veb|: 4 V


Maximum Collector Current |Ic max|: 30 A


Max. Operating Junction Temperature (Tj): 200 °C


Transition Frequency (ft): 2 MHz


Forward Current Transfer Ratio (hFE), MIN: 25


Noise Figure, dB: -


 Part No : ELE-CH061051683

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